Effect of electric fields on domain structure and dielectric properties of Pb(In1/2Nb1/2)O3-PbTiO3 near morphotropic phase boundary

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 6205-6208

  Yasuda, Naohiko ^a   Sakaguchi, Masahiro ^a   Itoh, Yuuki ^a   Ohwa, Hidehiro ^a   Yamashita, Yohachi ^b   Iwata, Makoto ^c   Ishibashi, Yoshihiro ^d  

^a GIFU UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^d AICHI SHUKUTOKU UNIVERSITY   (Japan)

Author keywords

Domain configuration; Morphotropic phase boundary; Permittivity; PIN PT solid solution single crystal

Indexed keywords

CRYSTAL STRUCTURE; DIFFUSION; ELECTRIC FIELD EFFECTS; LIGHT POLARIZATION; MICROSCOPIC EXAMINATION; PERMITTIVITY; PHASE TRANSITIONS; SINGLE CRYSTALS; SOLID SOLUTIONS;

DOMAIN STRUCTURE; ISHIBASHI THEORY; MORPHOTROPIC PHASE BOUNDARY; POLARIZED LIGHT MICROSCOPY;

LEAD COMPOUNDS;

EID: 0344309083     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6205     Document Type: Article

References (17)

1. J. Kuwata, K. Uchino and S. Nomura: Ferroelectrics 37 (1981) 579.
2. S. E. Park and T. R. Shrout: Mater. Res. Innovat. 1 (1997) 20.
3. S. Wada, S. Suzuki, T. Noma, T. Suzuki, M. Osada, M. Kakihara, S. E. Park, L. E. Cross and T. R. Shrout: Jpn. J. Appl. Phys. 38 (1999) 5505.
4. K. Harada, S. Shimanuki, T. Kobayashi, S. Saitoh and Y. Yamashita: Key. Eng. Mater. 157-158 (1999) 95.
5. N. Yasuda, H. Ohwa, M. Kume and Y. Yamashita: Jpn. J. Appl. Phys. 39 (2000) L66.
6. N. Yasuda, H. Ohwa, D. Hasegawa, K. Hayashi, Y. Hosono, Y. Yamashita, M. Iwata and Y. Ishibashi: Jpn. J. Appl. Phys. 39 (2000) 5586.
7. B. Noheda, D. E. Cox, G. Shirane, J. A. Gonzalo, L. E. Cross and S. E. Park: Appl. Phys. Lett. 74 (1999) 2059.
8. B. Noheda, J. A. Gonzalo, L. E. Cross, R. Guo, S. E. Park, D. E. Cox and G. Shirane: Phys. Rev. B 61 (2000) 8687.
9. Y. Uesu, M. Masuda, Y. Yamada, K. Fujishiro, D. E. Cox, B. Noheda and G. Shirane: J. Phys. Soc. Jpn. 71 (2002) 960.
10. H. Fu and R. E. Cohen: Nature 403 (2000) 281.
11. Y. Ishibashi and M. Iwata: Jpn. J. Appl. Phys. 37 (1998) L985.
12. Y. Ishibashi and M. Iwata: Jpn. J. Appl. Phys. 38 (1999) 800.
13. K. Fujishiro, R. Vlokh, Y. Uesu, Y. Yamada, J. M. Kiat, B. Dkhil and Y. Yamashita: Jpn. J. Appl. Phys. 37 (1998) 5246.
14. Z. G. Ye, M. Dong and L. Zhang: Ferroelectrics 229 (1999) 223.
15. Z. G. Ye and M. Dong: J. Appl. Phys. 87 (2000) 2312.
16. J. Sapriel: Phys. Rev. B 12 (1975) 5128.
17. S. Wada, S. E. Park, L. E. Cross and T. R. Shrout: Ferroelectrics 221 (1999) 147.