In situ monitoring of the 2D-3D growth-mode transition in In 0.3 Ga 0.7 As/GaAs (0 0 1) by reflectance-difference spectroscopy

Applied Surface Science

Volumn 221, Issue 1-4, 2004, Pages 48-52

  Medel Ruiz, C I ^a   Lastras Martinez A ^a   Balderas Navarro, R E ^a   Gallardo, S L ^a   Mendez Garcia V H ^a   Flores Camacho, J M ^a   Gaona Couto, A ^a   Lastras Martinez L F ^a  

^a UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

Author keywords

3D growth; Heterointerface; InGaAs; Reflectance anisotropy; Strain relaxation

Indexed keywords

ANISOTROPY; COMPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SPECTROSCOPIC ANALYSIS; STRAIN; SURFACE PHENOMENA;

REFLECTANCE SPECTROSCOPY; STRAIN RELAXATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0344308640     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00957-7     Document Type: Article

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