Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions

Electronics Letters

Volumn 39, Issue 23, 2003, Pages 1657-1658

  Yang, Tian ^a   Shchekin, O ^b   O'Brien, J D ^a   Deppe, D G ^b  

^a University of Southern California ^*  (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; PHOTOLUMINESCENCE; POLYMETHYL METHACRYLATES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

CONTINUOUS WAVE LASING; INDIUM ARSENIDE QUANTUM DOT; MICRODISKS; THRESHOLD PUMPING;

CONTINUOUS WAVE LASERS;

EID: 0344118216     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031058     Document Type: Article

References (6)

1. Ando, T., et al.: 'Mesoscopic physics and electronics' (Springer, New York, 1998)
2. Meystre, P., and Sargent, M., III: 'Elements of quantum optics' (Springer, New York, 1999)
3. Masumoto, Y., and Takagahara, T.: 'Semiconductor quantum dots: physics, spectroscopy, and applications' (Springer, New York, 2002)
4. Sugawara, M.: 'Self-assembled InGaAs/GaAs quantum dots', Semicond. Semimet., 1999, 60
5. Shchekin, O.B., and Deppe, D.G.: 'Low-threshold high-to 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region', IEEE Photonics Technol. Lett., 2002, 14, pp. 1231-1233
6. Yang, T., et al.: 'Microdisks with quantum dot active regions lasing near 1300 nm at room temperature'. Tech. Dig. Conf. on Lasers and Electro-Optics, Jacksonville, FL, USA, 2003, CWK3