Silicon wafer bonding mechanism for silicon-on-insulator structures

Japanese Journal of Applied Physics

Volumn 29, Issue 12, 1990, Pages 2311-2314

  Abe, Takao ^a   Takei, Tokio ^a   Uchiyama, Atsuo ^a   Yoshizawa, Katsuo ^a   Nakazato, Yasuaki ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Silicon wafer bonding; SOl structure; Tensile strength; Voids

Indexed keywords

EID: 0344115256     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.29.L2311     Document Type: Article

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