p-n junctions in (In,Se)/Cu(In,Ga)(Se,S)2 photovoltaic systems

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6985-6987

  Masse G ^a   Djessas, K ^a  

^a UNIVERSITÉ DE PERPIGNAN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; EVAPORATION; INDIUM; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; TIN COMPOUNDS;

DIFFUSIVITY; THERMAL EVAPORATION;

GLASS;

EID: 0344084066     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1621715     Document Type: Article

References (10)

1. K. Djessas, A. Abatchou, and G. Massé, J. Appl. Phys. 88, 5710 (2000).
2. J. F. Guillemoles, Thin Solid Films 361, 338 (2000).
3. G. Massé and K. Djessas, J. Appl. Phys. 82, 825 (1997).
4. C. Rincon and C. Bellabarba, Phys. Rev. B 33, 7160 (1986).
5. J. A. Van Vechten and J. C. Phillips, Phys. Rev. B 2, 2160 (1970).
6. G. Massé, J. Appl. Phys. 68, 2206 (1990).
7. S. B. Zhang, S. H. Wei, and A. Zunger, J. Appl. Phys. 83, 3192 (1998).
8. S. B. Zhang, S. H. Wei, A. Zunger, and H. Katayama-Yoshida, Phys. Rev. B 57, 9642 (1998).
9. A. Poure, G. Aguero, G. Massé, and J. P. Aicardi, J. Phys. 41, 707 (1980).
10. G. Massé and E. Redjai, J. Appl. Phys. 56, 1154 (1984).