The Study of Deep Levels in CdS/CdTe Solar Cells Using Admittance Spectroscopy and its Modifications

Materials Research Society Symposium - Proceedings

Volumn 763, Issue , 2003, Pages 453-458

  Gilmore, A S ^a   Kaydanov, V ^a   Ohno, T R ^a  

^a Department of Metallurgical and Materials Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEPOSITION; ELECTRIC ADMITTANCE; ELECTRIC CURRENTS; ENERGY GAP; OSCILLATIONS; SEMICONDUCTING CADMIUM TELLURIDE; SPECTROSCOPIC ANALYSIS;

ADMITTANCE SPECTROSCOPY; STATE DENSITY; VALENCE BANDS;

SOLAR CELLS;

EID: 0344065161     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-763-b9.6     Document Type: Conference Paper

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