Prospects for low noise and high speed InGaAs-on-silicon photodetectors

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 587-

  Pauchard, A ^a   Bitter, M ^a   Pan, Z ^a   Kristjansson, S ^a   Dimitrov, R ^a   Hodge, L ^a   Lo, Y H ^a  

^a Nova Crystals Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); IONIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SILICON WAFERS; THERMAL CONDUCTIVITY; THERMODYNAMIC PROPERTIES;

AVALANCHE PHOTODIODES; SILICON PHOTODETECTORS;

PHOTODETECTORS;

EID: 0344034727     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A. R. Hawkins et al., Appl. Phys. Lett., 70 (3), pp. 303-305, 1997.
2. Z. Pan, M. Bitter, A. Pauchard, S. Hummel, Y. Kang, P. Mages, P.K.L. Yu, Y.H. Lo, in Proc. SPIE, 2002, vol. 4905, pp. 491-495.
3. D.A. Tulchinsky, K.J. Williams, A. Pauchard, M. Bitter, Z. Pan, S. Hummel, Y.H. Lo, accepted for publication in Electronics Letters, 2003.
4. A. Pauchard, Z. Pan, M. Bitter, Y. Kang, P. Mages, S.G. Hummel, P.K.L. Yu, Y.H. Lo, Proc. IEEE LEOS'02, 11/2002, pp. 677-678.