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Volumn 34, Issue 5, 1998, Pages 440-441

Low-Temperature Growth of PbTe Films on Porous Silicon

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[No Author keywords available]

Indexed keywords


EID: 0344028694     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (9)
  • 1
    • 0023452410 scopus 로고
    • SOI Technology Using Buried Layers of Oxidized Porous Si
    • Barla, K., Bomchil, G., Herino, R., and Monroy, A., SOI Technology Using Buried Layers of Oxidized Porous Si, IEEE Circuits Devices Mag., 1987, vol. 3, no. 6, pp. 11-17.
    • (1987) IEEE Circuits Devices Mag. , vol.3 , Issue.6 , pp. 11-17
    • Barla, K.1    Bomchil, G.2    Herino, R.3    Monroy, A.4
  • 2
    • 0025417721 scopus 로고
    • Homoepitaxial Growth of Silicon on Anodized Porous Silicon
    • Ito, T., Yasumatsu, T., and Hiraki, A., Homoepitaxial Growth of Silicon on Anodized Porous Silicon, Appl. Surf. Sci., 1990, vol. 44. pp. 97-102.
    • (1990) Appl. Surf. Sci. , vol.44 , pp. 97-102
    • Ito, T.1    Yasumatsu, T.2    Hiraki, A.3
  • 3
    • 0027294192 scopus 로고
    • MBE Growth of Silicon Layers on the Porous Silicon Surface Precleaned in Vacuum at Low Temperatures
    • Shengurov, V.G., Shabanov, V.N., Gudkova, N.V., and Tkach, B.Ya., MBE Growth of Silicon Layers on the Porous Silicon Surface Precleaned in Vacuum at Low Temperatures, Microelektronika, 1993, vol. 22, no. 1, pp. 19-21.
    • (1993) Microelektronika , vol.22 , Issue.1 , pp. 19-21
    • Shengurov, V.G.1    Shabanov, V.N.2    Gudkova, N.V.3    Tkach, B.Ya.4
  • 8
    • 2542629944 scopus 로고
    • Epitaktische IV-VI Chmalbandhalbleiter-Schichten auf Si für IR-Sensorsysteme
    • Zogg, H. and Norton, P., Epitaktische IV-VI Chmalbandhalbleiter-Schichten auf Si für IR-Sensorsysteme, Helv. Phys. Acta, 1986, vol. 59, no. 1, pp. 168-171.
    • (1986) Helv. Phys. Acta , vol.59 , Issue.1 , pp. 168-171
    • Zogg, H.1    Norton, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.