Voltage tunable plasma resonances in induced-base hot-electron transistors

Applied Physics Letters

Volumn 70, Issue 19, 1997, Pages 2532-2534

  Ryzhii, V ^a  

^a UNIVERSITY OF AIZU   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343968309     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118911     Document Type: Article

References (7)

1. S. Luryi, IEEE Electron Device Lett. 6, 178 (1985).
2. S. Luryi, in High Speed Semiconductor Devices, edited by S. M. Sze (Wiley, New York, 1990), p. 399.
3. A. V. Chaplik. Sov. Phys. JETP 35, 395 (1972).
4. M. Dyakonov and M. S. Shur, Appl. Phys. Lett. 67, 1137 (1995).
5. M. Dyakonov and M. Shur, IEEE Trans. Electron Devices 43, 380 (1996).
6. V. Ryzhii and M. Ershov, J. Appl. Phys. 78, 1214 (1995).
7. A. Ya. Shik, Semiconductors 29, 697, 1995.