Carrier capture into a GaAs quantum well with a separate confinement region: comment on quantum and classical aspects

Semiconductor Science and Technology

Volumn 14, Issue 9, 1999, Pages 790-796

  Moško, Martin ^a   Kálna, Karol ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CLASSICAL CAPTURE MODEL; COLLISIONLESS MOTION; OPTIC PHONON; OPTIC PHONON MEDIATED CARRIER CAPTURE; PHONON CONFINEMENT; QUANTUM CAPTURE MODEL;

CARRIER MOBILITY;

EID: 0343962274     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/9/308     Document Type: Article

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