SCOPUS 정보 검색 플랫폼

Volumn 273-274, Issue , 1999, Pages 930-933

Defects in CuIn(Ga)Se2 solar cell material characterized by positron annihilation: Post-growth annealing effects

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE IONS; PHOTOCONDUCTIVITY; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; SOLAR CELLS;

POSITRON ANNIHILATIONS; POST-GROWTH ANNEALING EFFECTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0343953432 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00557-8 Document Type: Article

Times cited : (4)

References (10)

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