InGaP/GaAs provides high-linearity HBTs

Microwaves and RF

Volumn 39, Issue 2, 2000, Pages 121-129

  Browne, Jack ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343896776     PISSN: 07452993     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (2)

1. F.M. Yamada, A.K. Oki, D.C. Streit, B.L. Hikin, E.N. Kaneshiro, M.D. Lammert, L.T. Tran, T.R. Bullock P.C. Grossman, J.R. Scarpulla, And A.L. Gutierrez-Aitken, "Reliability Performance Of Components And ICs From A Production 1-μm GaAs HBT Process," 1999 GaAs IC Reliability Workshop Proceedings, pp. 110-118.
2. D.C. Streit, A.K. Oki, T.R. Block, M. Woitowicz, F.M. Yamada, and M. Hoppe, "Comparison Of MOCVD And MBE For GaAs-AlGaAs HBT Manufacturing," Technical Digest for the 1997 International Conference on GaAs Manufacturing, pp. 162-165.