Magnetoresistance of the 2-D impurity band in silicon inversion layers

Physica B+C

Volumn 117-118, Issue PART 2, 1983, Pages 655-657

  Hartstein, A ^a   Fowler, A B ^a   Woo, K C ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC FIELD EFFECTS;

MAGNETORESISTANCE;

SEMICONDUCTING SILICON;

EID: 0343895956     PISSN: 03784363     EISSN: None     Source Type: Journal    
DOI: 10.1016/0378-4363(83)90616-2     Document Type: Article

References (9)

1. Impurity bands in inversion layers
2. The effect of stress and strong magnetic fields on the shallow impurities in semiconductors and the piezoresistance and magnetoresistance for hopping conduction
3. Analysis of hopping conduction in impurity bands in inversion layers