Hopping conduction and localized states in p-Si wires formed by focused ion beam implantations

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2551-2554

  Iwano, Hirotaka ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343860368     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590208     Document Type: Article

References (15)

1. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, and H. Iwai, Tech. Dig. Int. Electron Devices Meet. XXX, 119 (1993).
2. H. Abe, K. Hamasaki, and T. Ishiguro, Jpn. J. Appl. Phys., Part 1 33, 7210 (1994).
3. K. Yano, T. Ishii, and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
4. A. Ohta, H. Niyama, T. Shibata, K. Nakajima, and A. Toriumi, Jpn. J Appl. Phys., Part 1 34, 4485 (1995).
5. P. Castrillo, D. Hessman, M. E. Pistol, J. A. Prieto, C. Pryor, and L. Samuelson, Jpn. J. Appl. Phys., Part 1 36, 4188 (1997).
6. H. Iwamo, S. Zaima, Y. Koide, and Y. Yasuda, J. Vac. Sci. Technol. B 11, 61 (1993).
7. H. Iwano, S. Zaima, T. Kimura, K. Matsuo, and Y. Yasuda, Jpn. J. Appl. Phys., Part 1 33, 7190 (1994).
8. P. N. Butcher and J. A. McInnes, Surf. Sci. 196, 139 (1988).
9. G. E. Pike and C. H. Seager, Phys. Rev. B 10, 1421 (1974).
10. V. Ambegaokar, B. I. Halperin, and J. S. Langer, Phys. Rev. 4, 2612 (1971).
11. R. A. Serota, R. K. Kalia, and P. A. Lee, Phys. Rev. B 33, 8441 (1986).
12. B. L. Shklovskii and J. A. Efros, Electric Properties of Doped Semiconductor (Springer, Berlin, 1984).
13. B. I. Shklovskii and B. Z. Spivak, Hopping Transport in Solid (North-Holland, Amsterdam, 1991).
14. A. Lewis, Phys. Rev. Lett. 29, 1555 (1972).
15. M. L. Knotek, M. Pollak, and T. M. Donovan, Phys. Rev. Lett. 30, 853 (1973).