Tailoring of epitaxial strain in doped lanthanummanganite thin films

Physica C: Superconductivity and its Applications

Volumn 341-348, Issue , 2000, Pages 777-778

  Haberraeier, Hanns Ulrich ^a   Razavi, Fereidoon ^a   Praus, Rainer ^a   Gudrun, M ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; DOPING (ADDITIVES); EPITAXIAL GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; LANTHANUM COMPOUNDS; METAL INSULATOR TRANSITION; PULSED LASER DEPOSITION; SINGLE CRYSTALS; STRAIN; SUPERCONDUCTING TRANSITION TEMPERATURE; TENSILE STRESS; TRANSPORT PROPERTIES;

EPITAXIAL STRAIN; LANTHANUMMANGANITE;

SUPERCONDUCTING FILMS;

EID: 0343832828     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(00)00688-2     Document Type: Article

References (12)

1. R. M. Kestrels et al. Physica 155B, 362 (1989)
2. R. von Helmholt et al. Phys. Rev. Lett 71, 2331 (1993)
3. C. Zener, Phys. Rev. B 82, 403 (1951)
4. J. Millis et al. Rev. Lett. 74, 5144 (1995)
5. and Phys. Rev. Lett. 77, 175(1996)
6. H.-U. Habermeier, Eur. J. Solid State Inorg. Chem 28, 201 (1991)
7. T.Y. Koo et al. Appl. Phys. Lett 71, 977 (1997)
8. R. A. Rao, Appl. Phys. Lett. 73, 7294 (1998)
9. O.I Lebedev et al. Phys. Rev. B 58, 8065 (1998)
10. G. M. Gross et al. Appl. Surf. Sci. 138 117 (1999)
11. S. Uhlenbruck et al. Phys. Rev. Lett. 82, 185 (1999)
12. T. Roch et al. Appl. Phys. A 67, 1(1998)