Characterization of the field-effect addressable potentiometric sensor (FAPS)

Sensors and Actuators, B: Chemical

Volumn 68, Issue 1, 2000, Pages 266-273

  Bohm S ^a   Parak, W J ^a   George, M ^a   Gaub, H E ^a   Lorke, A ^a  

^a UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRIC POTENTIAL; ELECTRODES; FIELD EFFECT TRANSISTORS; FREQUENCIES; GATES (TRANSISTOR); IMAGE QUALITY; THIN FILMS;

EPITAXIAL LIFT OFF TECHNIQUE; FIELD EFFECT ADDRESSABLE POTENTIOMETRIC SENSOR; FIELD EFFECT CHANNELS; POTENTIAL SENSITIVITY;

POTENTIOMETRIC SENSORS;

EID: 0343826061     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00443-3     Document Type: Article

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