메뉴 건너뛰기




Volumn 44, Issue 2, 1999, Pages 186-189

Anomalous dielectric behavior in nanocrystalline γ-Fe2O3

Author keywords

Dielectric behavior; Nanocrystalline Fe2O3; Polarization mechanism

Indexed keywords


EID: 0343783882     PISSN: 10016538     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02884749     Document Type: Article
Times cited : (2)

References (13)
  • 1
    • 0023650436 scopus 로고
    • Ceramics ductile at low temperature
    • Karch, J., Birringer, R., Gleiter, H., Ceramics ductile at low temperature, Nature, 1987, 330(6148): 556.
    • (1987) Nature , vol.330 , Issue.6148 , pp. 556
    • Karch, J.1    Birringer, R.2    Gleiter, H.3
  • 3
    • 0346543359 scopus 로고    scopus 로고
    • Recent research progresses in nanocrystalline materials
    • Lu, K., Zhou, F., Recent research progresses in nanocrystalline materials, Acta Metallugica Sinica (in Chinese), 1997, 33 (1): 99.
    • (1997) Acta Metallugica Sinica (in Chinese) , vol.33 , Issue.1 , pp. 99
    • Lu, K.1    Zhou, F.2
  • 4
    • 25744453562 scopus 로고
    • X-ray diffraction studies of the structure of nanometer-sized crystalline materials
    • Zhu, X., Birringer, R., Herr, U. et al., X-ray diffraction studies of the structure of nanometer-sized crystalline materials, Phys. Rev. B. 1987, 35(17): 9085.
    • (1987) Phys. Rev. B. , vol.35 , Issue.17 , pp. 9085
    • Zhu, X.1    Birringer, R.2    Herr, U.3
  • 5
    • 36149008879 scopus 로고
    • The influence of a transverse magnetic field on the conductivity of thin films
    • Sodheimer, E. H., The influence of a transverse magnetic field on the conductivity of thin films. Physics Review. 1950, 80 (3): 401.
    • (1950) Physics Review , vol.80 , Issue.3 , pp. 401
    • Sodheimer, E.H.1
  • 6
    • 36549102051 scopus 로고
    • Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
    • Krick, D. T., Lenahan, P. M., Electrically active point defects in amorphous silicon nitride: an illumination and charge injection study, Journal of Applied Physics, 1988, 64(7): 3588.
    • (1988) Journal of Applied Physics , vol.64 , Issue.7 , pp. 3588
    • Krick, D.T.1    Lenahan, P.M.2
  • 7
    • 84956099649 scopus 로고
    • Anomalous dielectric behavior in nanometer-sized amorphous silicon nitride
    • Wang, T., Zhang, L. D., Mou, J. M., Anomalous dielectric behavior in nanometer-sized amorphous silicon nitride, Chinese Physics Letters, 1993, 10(11): 676.
    • (1993) Chinese Physics Letters , vol.10 , Issue.11 , pp. 676
    • Wang, T.1    Zhang, L.D.2    Mou, J.M.3
  • 9
    • 0342435347 scopus 로고
    • Interfacial polarization and its mechanism of nanostructured amorphous silicon nitride
    • Wang, T., Zhang, L. D., Interfacial polarization and its mechanism of nanostructured amorphous silicon nitride, Chinese Science Bulletin, 1994, 39(18): 1511.
    • (1994) Chinese Science Bulletin , vol.39 , Issue.18 , pp. 1511
    • Wang, T.1    Zhang, L.D.2
  • 12
    • 0004240239 scopus 로고
    • Dover, Dover Publications, Inc.
    • Debye, P., Polar Molecules, Dover, Dover Publications, Inc. 1928, 92-107, Li, H. R., Introduction to Dielectric Physics (in Chinese), Chengdu: Chengdu Science and Technology University Press, 1990, 129.
    • (1928) Polar Molecules , pp. 92-107
    • Debye, P.1
  • 13
    • 0003902762 scopus 로고
    • Chengdu: Chengdu Science and Technology University Press
    • Debye, P., Polar Molecules, Dover, Dover Publications, Inc. 1928, 92-107, Li, H. R., Introduction to Dielectric Physics (in Chinese), Chengdu: Chengdu Science and Technology University Press, 1990, 129.
    • (1990) Introduction to Dielectric Physics (in Chinese) , pp. 129
    • Li, H.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.