AlGaAs/GaAs heterostructures grown on a focused-Be-ion-beam written backgate

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2543-2546

  Hirayama, Y ^a   Saku, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343771644     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590206     Document Type: Article

References (16)

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13. Although the drag experiments generally have been reported for closely-placed 2DEG double layers (Refs. 9 and 10), the drag effect was clearly observed for a coupling between 2D and 3D for electrons [P. M. Solomon, P. J. Proce, D. J. Frank, and D. C. La Tulipe, Phys. Rev. Lett. 63, 2508 (1989)]. In case of electron-hole coupling, a combination of 2DEG and 2DHG using modulation doping needs a large layer separation beyond 190 nm (Ref. 11). By replacing 2DHG to 3DHG, the separation can be reduced as shown in this article. Therefore, the present 2DEG-3DHG system is also interesting to study the drag effect.
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