Dry thienylation of the silicon (111)-(7 x 7) surface [6]

Journal of the American Chemical Society

Volumn 122, Issue 8, 2000, Pages 1812-1813

  Cao, Yong ^a,b   Yong, Kian Soon ^a   Wang, Zheng Qiang ^a   Chin, Wee Shong ^a   Lai, Yee Hing ^a   Deng, Jing Fa ^b   Xu, Guo Qin ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BINDING; CHEMICAL REACTION; CHEMICAL STRUCTURE; ENERGY TRANSFER; LETTER; REACTION ANALYSIS;

EID: 0343621492     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja993386q     Document Type: Letter

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25. The spacing between adjacent rest atom and adatom is 4.45 Å, which is quite comparable to the dimension of thiophene (∼2.47 Å). Considering the formation of C-Si bond (∼1.8-2.1 Å), a bridged geometry is reasonable.
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28. -1 are assigned to C=C stretching, C-H in-plane bending; C-C stretching, C-S-C stretching, C-H out-of-plane bending, and C-Si stretching modes, respectively.
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