New Model Extraction for Predicting Distortion in HEMT and MESFET Circuits

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 9, 1999, Pages 363-365

  Qu, Guoli ^a   Parker, Anthony E ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

Intermodulation distortion; MODFET's; nonlinear distortion; semiconductor device modelling; Volterra series

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; NONLINEAR DISTORTION; SEMICONDUCTOR DEVICE MODELS;

INTERMODULATION DISTORTION; VOLTERRA SERIES;

INTERMODULATION MEASUREMENT;

EID: 0343603477     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.790475     Document Type: Article

References (5)

1. G. Qu and A. E. Parker,“Modeling intermodulation distortion in MESFET's and HEMT's,”in Proc. 14th Australian Microelectronics Conf., Sept. 29-Oct. 1, 1997, pp. 70-75.
2. J. J. Bussgang, L. Ehrman, and J. W. Graham,“Analysis of nonlinear systems with multiple inputs,”Proc. IEEE, vol. 62, pp. 1088-1119, 1974.
3. S. A. Maas, Nonlinear Microwave Circuits. Boston, MA: Artech House, 1988.
4. G. Qu,“Characterizing intermodulation in high electron mobility tran sistors,”Ph.D. dissertation, 1998.
5. J. C. Pedro and J. Perez,“Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model,”IEEE Trans. Microwave Theory Tech., vol. 42, pp. 25-33, Jan. 1994.