Cleanroom compatible anodization cell for 150 mm Si wafers

Review of Scientific Instruments

Volumn 67, Issue 6, 1996, Pages 2346-2350

  Bardwell, Jennifer A ^a,c   LeBrun, Les ^a,c   Evans, R James ^a,c   Curry, Donald G ^a,d   Abbott, Roger ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b NORTEL NETWORKS   (Canada)

^c Inst for Microstructural Science

^d Research Programs Support Office

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343520390     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1146944     Document Type: Article

References (21)

1. J. A. Bardwell, R. J. Evans, N. Draper, S. J. Rolfe, A. Naem, and M. Simard-Normandin, J. Electrochem. Soc. (to be submitted).
2. J. A. Bardwell, E. M. Allegretto, B. Mason, L. Erickson, and G. Champion, Appl. Phys. Lett. (in press).
3. K. Imai and S. Nakajima, IEDM Tech. Digest, Int. Electron Devices Meeting 1981, 376 (1981).
4. E. J. Zorinsky, D. B. Spratt, and R. L. Virkus, IEDM Tech. Digest, Int. Electron Devices Meeting 1986, 431 (1986).
5. M. I. J. Beale, N. G. Chew, M. J. Uren, A. G. Cullis, and J. D. Benjamin, Appl. Phys. Lett. 46, 86 (1985).
6. J. A. Bardwell, N. Draper, and P. Schmuki, J. Appl. Phys. (in press).
7. J. A. Bardwell, P. Schmuki, G. I. Sproule, D. Landheer, and D. F. Mitchell, J. Electrochem. Soc. 142, 3933 (1995).
8. T. F. Hung, H. Wong, Y. C. Cheng, and C. K. Pun, J. Electrochem. Soc. 138, 3747 (1991).
9. K. B. Clark, J. A. Bardwell, and J.-M. Baribeau, J. Appl. Phys. 76, 3114 (1994).
10. I. W. Boyd and J. I. B. Wilson, J. Appl. Phys. 53, 4166 (1982).
11. P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, J. Vac. Sci. Technol. A 4, 689 (1986).
12. I. W. Boyd and J. I. B. Wilson, J. Appl. Phys. 62, 3195 (1987).
13. I. W. Boyd and J. I. B. Wilson, Appl. Phys. Lett. 50, 320 (1987).
14. G. Lucovsky, M. J. Manitini, J. K. Srivastava, and E. A. Irene, J. Vac. Sci. Technol. B 5, 530 (1987).
15. J. T. Fitch, G. Lucovsky, E. Kobeda, and E. A. Irene, J. Vac. Sci. Technol. B 7, 153 (1989).
16. M. K. Gunde and B. Aleksandrov, Appl. Spectrosc. 44, 970 (1990).
17. C. Martinet and R. A. B. Devine, J. Appl. Phys. 77, 4343 (1995).
18. C. H. Bjorkman, T. Yamazaki, S. Miyazaki, and M. Hirose, J. Appl. Phys. 77, 313 (1995).
19. W. A. Pliskin, in Semiconductor Silicon, edited by H. R. Huff and R. R. Burgess, Electrochemical Society Softbound Proceedings Series (Electrochemical Society, Princeton, NJ, 1973), p. 506.
20. E. M. Allegretto and J. A. Bardwell, J. Vac. Sci. Technol. (in press).
21. H. Kikuyama, M. Waki, M. Miyashita, T. Yabune, N. Miki, J. Takano, and T. Ohmi, J. Electrochem. Soc. 141, 366 (1994).