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Volumn 31, Issue 12, 1984, Pages 1784-1789

A Linear and Compact Charge-Coupled Charge Packet Differencer/Replicator

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EID: 0343494579     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21789     Document Type: Article
Times cited : (13)

References (12)
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  • 2
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  • 3
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    • V. A. Browne and K. D. Perkins, “A nonoverlapping gate charge-coupling coupling technology for serial memory and signal processing applications,” IEEE Trans. Electron Devices, vol. ED-23, p. 271, 1976.
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    • Browne, V.A.1    Perkins, K.D.2
  • 4
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    • A simplified graphical evaluation of high-frequency and quasi-static capacitance-voltage curves
    • S. Wagner and C. N. Berglund, “A simplified graphical evaluation of high-frequency and quasi-static capacitance-voltage curves,” Rev. Sci. Instrum., vol. 43, p. 12, 1972.
    • (1972) Rev. Sci. Instrum. , vol.43 , pp. 12
    • Wagner, S.1    Berglund, C.N.2
  • 6
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    • The gettering of gold and copper from silicon
    • J. L. Lambert and M. Reese, “The gettering of gold and copper from silicon,” Solid-State Electron., vol. 11, p. 1055, 1968.
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    • Lambert, J.L.1    Reese, M.2
  • 7
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    • Charge-coupled analog computer elements and their application to smart image sensors
    • Ph.D. dissertation, Yale University, New Haven, CT.
    • E. R. Fossum, “Charge-coupled analog computer elements and their application to smart image sensors,” Ph.D. dissertation, Yale University, New Haven, CT, 1984.
    • (1984)
    • Fossum, E.R.1
  • 8
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    • Charge packet initiated switching of bistable metal/tunnel-oxide/semiconductor (MTOS) junctions
    • E. R. Fossum and R. C. Barker, “Charge packet initiated switching of bistable metal/tunnel-oxide/semiconductor (MTOS) junctions,” IEEE Electron Device Lett., vol. EDL-15, no. 4, 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-15 , Issue.4
    • Fossum, E.R.1    Barker, R.C.2
  • 9
    • 0021483434 scopus 로고
    • Measurement of hole leakage and impact ionization currents in bistable metal/tunnel-oxide/semiconductor (MTOS) junctions
    • — “Measurement of hole leakage and impact ionization currents in bistable metal/tunnel-oxide/semiconductor (MTOS) junctions,” IEEE Trans. Electron Devices, vol. ED-31, no. 9, pp. 1168–1174, 1984.
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    • Fossum, E.R.1    Barker, R.C.2
  • 10
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    • Two-phase charge-coupled devices with overlapping polysilicon and aluminum gates
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    • Kosonocky, W.F.1    Carnes, J.E.2
  • 11
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    • Charge transfer in charge-coupled devices
    • C.-K. Kim and M. Lenzlinger, “Charge transfer in charge-coupled devices,” J. Appl. Phys., vol. 42, p. 3586, 1971.
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    • Kim, C.-K.1    Lenzlinger, M.2
  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.