Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection

IEEE Photonics Technology Letters

Volumn 12, Issue 8, 2000, Pages 945-947

  Verschaffelt, G ^a   Van Der Vleuten, W ^c,d   Creusen, M ^c,d   Smalbrugge, E ^c   Van De Roer, T G ^c   Karouta, F ^c   Strijbos, R C ^c   Danckaert, J ^a   Veretennicoff, I ^a   Ryvkin, B ^a,b   Thienpont, H ^a   Acket, G A ^c  

^a VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

^b IOFFE INSTITUTE   (Russian Federation)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d FREE UNIVERSITY OF BRUSSELS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC CURRENTS; LIGHT EMISSION; LIGHT POLARIZATION; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ALUMINUM ARSENIDE; ASYMMETRIC CURRENT INJECTION; CURRENT CONSTRICTION APERTURE; DISTRIBUTED BRAGG REFLECTOR; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0343442466     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.867969     Document Type: Article

References (11)

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