Poly(acetoxy-p-phenylene vinylene) based diode with a soft breakdown behaviour

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 565-569

  De Lima, J R ^a   Peres L O ^b   Garcia, J R ^b   Gruber, J ^b   Hummelgen I A ^a  

^a FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRODES; POLYMER BLENDS; POLYMETHYL METHACRYLATES; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE CONTROL;

CRITICAL VOLTAGE; FORWARD BIAS; POLYACETOXY P PHENYLENE VINYLENE;

SEMICONDUCTOR DIODES;

EID: 0343431510     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00290-7     Document Type: Article

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