메뉴 건너뛰기
Physical Review Letters
Volumn 64, Issue 9, 1990, Pages 1035-1038
Direct measurement of crystal surface stress
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0343421661     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.64.1035     Document Type: Article
Times cited : (151)
References (22)
  • 11
    • 84927412839 scopus 로고    scopus 로고
    • Silicon Detector Corp., Model No. 380-23-21-051.
  • 12
    • 84927412838 scopus 로고    scopus 로고
    • See, for example, L. D. Landau and E. M. Lifshitz, Theory of Elasticity (Pergamon, Oxford, 1975), 2nd rev. English ed. Note that the condition for validity of this expression is L Δ THETA << h. In our case, L Δ Θ approx 10-4 cm and h = 10-2 cm.
  • 20
    • 84927412837 scopus 로고    scopus 로고
    • The interpretation of Eq. (2) is straightforward. The surface stress per 7 times 7 cell includes the stress in the triangular adatom-covered islands, whose total area is 42 1 times 1 cells, plus contributions from the nine dimers and one corner hole of the DAS 7 times 7 structure. In addition, there is an added stress σf in the faulted half of the DAS unit cell. Note that the strain derivatives of dimer and corner-hole energies discussed in Ref. 19 contribute to the trace of the surface stress tensor σij. Since the stress is isotropic, these strain derivatives are equal to our values for 2 σd and 2 σc, respectively.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.