Determination of the spectral behaviour of porous silicon based photodiodes

Solid-State Electronics

Volumn 43, Issue 6, 1999, Pages 1153-1157

  Martin Palma R J ^a   Guerrero Lemus, R ^a   Moreno, J D ^a   Martinez Duart J M ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; GOLD; PHOTODIODES; POROSITY; QUANTUM EFFICIENCY;

SPECTRAL RESPONSE;

POROUS SILICON;

EID: 0343392456     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00039-8     Document Type: Article

References (10)

1. Canham L.T. Appl Phys Lett. 57:1990;1046.
2. Koshida N., Koyama H. Appl Phys Lett. 60:1992;347.
3. Zheng J.P., Jiao K.L., Shen W.P., Anderson W.A., Kwok H.S. Appl Phys Lett. 61:1992;459.
4. Mooney W.J. Optoelectronic devices and principles. 1991;Prentice-Hall, London. p. 255.
5. Chuang S.L. Physics of optoelectronic devices. 1995;Wiley, New York. p. 599.
6. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;749-751 Wiley, New York.
7. Angerstein J. UV-visible and near-IR semiconductor sensors. Wagner E., Dändliker R., Spenner K. Sensors. 1992;185-191 VCH, Weinheim.
8. Balagurov L.A., Yarkin D.G., Petrovicheva G.A., Petrova E.A., Orlov A.F., Andryushin S.Ya. J Appl Phys. 82:(9):1997;4647.
9. Valkonen E., Karlsson B., Ribbing C.-G. Solar Energy. 32:(2):1984;211.
10. Granqvist C.G. Energy-efficient windows: present and forthcoming technology. Materials Science for Solar Energy Conversion Systems. 1991;Pergamon, Oxford.