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See, for example, G.A. Hebner, M.G. Blain, T.W. Hamilton, C.A. Nichols, and R.L. Jarecki, J. Vac. Sci. Technol. A 17, 3172 (1999); J. Proost, H. Li, T. Conard, W. Boullart, and K. Maex, J. Electrochem. Soc. 146, 4230 (1999); J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress, and S.J. Pearton, J. Vac. Sci. Technol. A 17, 1326 (1999); B.J. Howard, and C. Steinbruchel, ibid. 12, 1259 (1994).
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See, for example, H. Cho, Y.B. Hahn, D.C. Hays, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, S.J. Pearton, J. Han, and R.J. Shul, J. Vac. Sci. Technol. A 17, 2202 (1999); J.J. Wang, H. Cho, J.R. Childress, S.J. Pearton, F. Sharifi, K.H. Dahmen, E.S. Gillman, Plasma Chem. Plasma Process. 19, 229 (1999); J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress, and S.J. Pearton, J. Vac. Sci. Technol. B 16, 3349 (1998); J. Hong, H. Cho, T. Maeda, C.R. Abernathy, S.J. Pearton, R.J. Shul, and W.S. Robson, ibid. 16, 2690 (1998); H. Cho, J. Hong, T. Maeda, S.M. Donovan, J.D. MacKenzie, C.M. Abenathy, S.J. Pearton, R.J. Shul, and J. Han, MRS Internet J. Nitride Semicond. Res. 3, 5 (1998).
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See, for example, H. Cho, Y.B. Hahn, D.C. Hays, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, S.J. Pearton, J. Han, and R.J. Shul, J. Vac. Sci. Technol. A 17, 2202 (1999); J.J. Wang, H. Cho, J.R. Childress, S.J. Pearton, F. Sharifi, K.H. Dahmen, E.S. Gillman, Plasma Chem. Plasma Process. 19, 229 (1999); J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress, and S.J. Pearton, J. Vac. Sci. Technol. B 16, 3349 (1998); J. Hong, H. Cho, T. Maeda, C.R. Abernathy, S.J. Pearton, R.J. Shul, and W.S. Robson, ibid. 16, 2690 (1998); H. Cho, J. Hong, T. Maeda, S.M. Donovan, J.D. MacKenzie, C.M. Abenathy, S.J. Pearton, R.J. Shul, and J. Han, MRS Internet J. Nitride Semicond. Res. 3, 5 (1998).
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See, for example, H. Cho, Y.B. Hahn, D.C. Hays, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, S.J. Pearton, J. Han, and R.J. Shul, J. Vac. Sci. Technol. A 17, 2202 (1999); J.J. Wang, H. Cho, J.R. Childress, S.J. Pearton, F. Sharifi, K.H. Dahmen, E.S. Gillman, Plasma Chem. Plasma Process. 19, 229 (1999); J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress, and S.J. Pearton, J. Vac. Sci. Technol. B 16, 3349 (1998); J. Hong, H. Cho, T. Maeda, C.R. Abernathy, S.J. Pearton, R.J. Shul, and W.S. Robson, ibid. 16, 2690 (1998); H. Cho, J. Hong, T. Maeda, S.M. Donovan, J.D. MacKenzie, C.M. Abenathy, S.J. Pearton, R.J. Shul, and J. Han, MRS Internet J. Nitride Semicond. Res. 3, 5 (1998).
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See, for example, H. Cho, Y.B. Hahn, D.C. Hays, C.R. Abernathy, S.M. Donovan, J.D. MacKenzie, S.J. Pearton, J. Han, and R.J. Shul, J. Vac. Sci. Technol. A 17, 2202 (1999); J.J. Wang, H. Cho, J.R. Childress, S.J. Pearton, F. Sharifi, K.H. Dahmen, E.S. Gillman, Plasma Chem. Plasma Process. 19, 229 (1999); J. Hong, J.A. Caballero, E.S. Lambers, J.R. Childress, and S.J. Pearton, J. Vac. Sci. Technol. B 16, 3349 (1998); J. Hong, H. Cho, T. Maeda, C.R. Abernathy, S.J. Pearton, R.J. Shul, and W.S. Robson, ibid. 16, 2690 (1998); H. Cho, J. Hong, T. Maeda, S.M. Donovan, J.D. MacKenzie, C.M. Abenathy, S.J. Pearton, R.J. Shul, and J. Han, MRS Internet J. Nitride Semicond. Res. 3, 5 (1998).
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