Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 844-848

  Wolfframm, D ^a   Bailey, P ^b   Evans, D A ^a   Neuhold, G ^c   Horn, K ^c  

^a GLYNDWR UNIVERSITY   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343278888     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580401     Document Type: Article

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