Simulation of silicon deposition from SiHCl3 in a CVD barrel reactor at atmospheric pressure

Computers and Chemical Engineering

Volumn 22, Issue SUPPL.1, 1998, Pages

  De Paola, E ^a   Duverneuil, P ^a  

^a LABORATOIRE DE GÉNIE CHIMIQUE   (France)

Author keywords

Barrel reactor; CVD; Silicon epitaxial deposit; Soret effect

Indexed keywords

EID: 0343273202     PISSN: 00981354     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0098-1354(98)00124-0     Document Type: Article

References (6)

1. Bird, R.B., Stewart, W. E.and Lightfoot, E.N., (1960) "Transport Phenomena"
2. Coltrin, M.E., Kee, R.J. and Miller, J.A., (1984), J. Electrochem. Soc., 131, 425
3. Coltrin, M.E., Kee, R.J. and Miller, J.A., (1986), J. Electrochem. Soc., 133, 1206
4. Juza, J. and Cermak, J., (1980), Chem. Eng. Sci., 45, 429
5. Juza, J. and Cermak, J., (1982),), J. Electrochem. Soc., 129, 1627
6. Kleijn, C.R., (1991), J. Electrochem. Soc., 138