Far-infrared study of a laterally confined electron gas formed by molecular beam epitaxial regrowth on a patterned (100) n+-GaAs substrate

Applied Physics Letters

Volumn 71, Issue 4, 1997, Pages 497-499

  Arnone, D D ^a   Cina, S ^a,c   Burroughes, J H ^a   Holmes, S N ^a   Burke, T ^b   Hughes, H P ^b   Ritchie, D A ^b   Pepper, M ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Cavendish Laboratory   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343269865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119589     Document Type: Article

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