Integration study of benzocyclobutene with CVD-based aluminum metallization

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 277-279

  Gundlach, H ^a   Knorr, A ^a   Nijsten, S ^a   Kumar, K ^a   Bian, Z ^a   Talevi, R ^a   Shaffer, E O ^b   Kaloyeros, A E ^a   Geer, R E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b DOW CHEMICAL COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BUTENES; CHEMICAL VAPOR DEPOSITION; INTEGRATED CIRCUIT INTERCONNECTS; POLYMER FILMS; REACTIVE SPUTTERING; TITANIUM NITRIDE;

ALUMINUM METALLIZATION; BENZOCYCLOBUTENE; BENZOCYCLOBUTENE POLYMERS; CHEMICAL VAPOR DEPOSITIONS (CVD); GAP FILLING; MULTILEVEL WIRING; PATTERNED FILMS;

ALUMINUM COATINGS;

EID: 0343226634     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704922     Document Type: Conference Paper

References (6)

1. Metallization: Theory and Practice for VLSI and ULSI (1993) S. P. Murarka, Butteworth-Heinemann, Boston.
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3. J. Faltermeier, A. Knorr, R. Talevi, H. Ciundlach, K.A. Kumar, G.P. Peterson, and A. E. Kaloyeros, J. Vac. Sci. Technol. B, Vol. 15 No. 5, Oct 1997, pp.1758-1766.
4. J. Hummel, unpublished results.
5. K. Sugai, H. Okabayashi, T. Shinzawa, 9. Kishida, A. Kobayashi, T. Yako, and H. Kadokura, J. Vac. Sci. Technol. B, Vol. 13 No. 5, Nov. 1995, p 21 15.
6. E. O. Shaffer, F. R. Meyers, G. Potter, and F. Hayes, "Interface studies of cyclotene SO21 and copper," Proceedings of Advanced Metallization and Interconnect Systems for ULSI, San Diego, 1997.