On the design and fabrication of novel Lateral Bipolar Transistor in a deep-submicron technology

Microelectronics Journal

Volumn 31, Issue 3, 2000, Pages 199-205

  Gomez R ^a   Bashir, R ^a   Neudeck, G W ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

DEEP-SUBMICRON TECHNOLOGY; LATERAL BIPOLAR JUNCTION TRANSISTORS (LBJT);

BIPOLAR TRANSISTORS;

EID: 0343192440     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00134-2     Document Type: Article

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