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Volumn 86, Issue 3, 2001, Pages 476-479

Nonlinear pulse propagation in semiconductors: hole burning within a homogeneous line

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRIC FIELDS; FOURIER TRANSFORMS; NONLINEAR OPTICS;

EID: 0343026507     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.476     Document Type: Article
Times cited : (9)

References (21)
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    • V. M. Axt and A. Stahl, Z. Phys. B 93, 195 (1994); M. Lindberg et al., Phys. Rev. B 50, 18 060 (1994); W. Schäfer et al., Phys. Rev. B 53, 16 429 (1996).
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    • V. M. Axt and A. Stahl, Z. Phys. B 93, 195 (1994); M. Lindberg et al., Phys. Rev. B 50, 18 060 (1994); W. Schäfer et al., Phys. Rev. B 53, 16 429 (1996).
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    • note
    • 0 = 135 Å, an additional background refractive index nb = 3, and a background dephasing constant γ = 1/5 ps. A 250 fs Gaussian input pulse is used for Fig. 1.
  • 20
    • 0342935879 scopus 로고    scopus 로고
    • note
    • The following parameters were used: b = 1/150 fs, a = 1/2000 fs, B = bΘ/2, A = aΘ/2 (for positive definite pulse), A = -0.95aΘ/2 (for the small area pulses in Fig. 2), A = -0.995aΘ/2 (f = 0.012γ pulse. Fig. 3), Θ = 0.2π (for Pauli blocking), Θ = 0.05π (for meanfield and correlations).


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