Chemical beam epitaxial growth of Si-doped GaAs and InP by using silicon tetraiodide

Applied Physics Letters

Volumn 68, Issue 22, 1996, Pages 3102-3104

  Izumi, Shigekazu ^a   Hayafuji, Norio ^a   Ito, Kazuhiko ^a   Sato, Kazuhiko ^a   Otsubo, Mutsuyuki ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342975166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116436     Document Type: Article

References (12)

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