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Volumn 375, Issue 1-2, 2000, Pages 82-86

Characterization of a silicon carbide thin layer prepared by a self-propagating high temperature synthesis reaction

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; GRAPHITE; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); SILICON CARBIDE; SUBSTRATES; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

EID: 0342973182     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01266-9     Document Type: Article
Times cited : (10)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.