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Volumn 375, Issue 1-2, 2000, Pages 82-86
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Characterization of a silicon carbide thin layer prepared by a self-propagating high temperature synthesis reaction
a b a a c |
Author keywords
[No Author keywords available]
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
GRAPHITE;
INTERDIFFUSION (SOLIDS);
INTERFACES (MATERIALS);
SILICON CARBIDE;
SUBSTRATES;
SYNTHESIS (CHEMICAL);
X RAY DIFFRACTION ANALYSIS;
SELF-PROPAGATING HIGH TEMPERATURE SYNTHESIS;
SEMICONDUCTING FILMS;
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EID: 0342973182
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(00)01266-9 Document Type: Article |
Times cited : (10)
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References (19)
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