p-type conductivity control of ZnMnTe and CdMnTe/ZnTe quantum wells grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 159-162

  Yasuda, Takashi ^a,b   Dang Duc, Manh ^b   Segawa, Yusaburo ^b  

^a Ishinomaki Senshu University   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; MANGANESE; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

CADMIUM MANGANESE TELLURIDE; DILUTED MAGNETIC SEMICONDUCTORS; MODULATION DOPING; MULTI QUANTUM WELLS; PLASMA CELL; SPIN; ZINC MANGANESE TELLURIDE; ZINC TELLURIDE;

MAGNETIC SEMICONDUCTORS;

EID: 0342954989     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00061-0     Document Type: Article

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