Phase stability during molecular beam epitaxial growth of CdTe on InSb(111) substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1716-1719

  Huerta, J ^a   Lopez M ^b   Zelaya Angel, O ^b  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EXPANSION; X RAY CRYSTALLOGRAPHY;

HETEROEPITAXIAL GROWTH; PHOTOREFLECTANCE SPECTROSCOPY (PR); WURTZITE PHASE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0342906683     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591459     Document Type: Article

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