SCOPUS 정보 검색 플랫폼

Volumn 166, Issue 1, 2000, Pages 45-50

Electron correlation effects at semiconductor interfaces: A comparison of the Si(111)-3×3 and the Sn/Ge(111)-3×3 reconstructions

(3) Perez R a Ortega, J a Flores, F a

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; FERMI LEVEL; FOURIER TRANSFORMS; IMAGE ANALYSIS; IMAGE RECONSTRUCTION; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TIN;

ELECTRON CORRELATION EFFECTS; METAL-INSULATOR TRANSITIONS;

SEMICONDUCTOR MATERIALS;

EID: 0342844441 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(00)00418-9 Document Type: Article

Times cited : (4)

References (9)

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