Comparison of damage created by a chemical downstream etcher and plasma-immersion system in metal-oxide-semiconductor capacitors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 577-581

  Brozek, Tomasz ^a,c   Dao, Thuy ^b,d   Viswanathan, Chand R ^a  

^a Engineering IV   (United States)

^b SEMATECH   (United States)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342831196     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588434     Document Type: Review

References (12)

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