Quantitative growth-investigation of zincblende ZnMgSe/GaAs(0 0 1) and ZnSe/GaAs(0 0 1) by means of RHEED, HRXRD and thickness monitoring

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 31-36

  Frey, Thomas ^a,b   Reisinger, Thomas ^a   Folger, Bernhard ^a   Kastner, Marcus ^a   Gebhardt, Wolfgang ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

Author keywords

II VI semiconductor; MBE; MgSe lattice constant; RHEED; Sticking coefficient; ZnMgSe content

Indexed keywords

EID: 0342801851     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-0248(98)80288-1     Document Type: Article

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