Large diameter semiconductor ring lasers in tensile strained InP/InGaAsP material

Optics InfoBase Conference Papers

Volumn , Issue , 1996, Pages 520-523

  Krauss, Thomas F ^a   Pottinger, Hanson ^a   Bryce, A Catrina ^a   Marsh, John H ^a   De La Rue, Richard M ^a   Button, Chris C ^b   Roberts, John S ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342785700     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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3. Krauss, T. F., Martins-Filho, J. F., Ironside, C.N., Laybourn, P.J.R. and De La Rue, R. M., "Mode-locking in semiconductor ring lasers with two saturable absorbers", Proceedings of the European Conference on Integrated Optics, (ECIO), Delft, The Netherlands, April 1995, pp.55-58.
4. Krames, M.R., Minervi, A.D. and Holonyak, Jr., N., "Deep-oxide curved resonator for low-threshold AlGaAs-GaAs quantum well heterostructure ring lasers", Appl.Phys.Lett., 1995, 67, pp.73-75.
5. Krauss, T.F., De La Rue, R.M., Laybourn, P.J.R., Vögele, B. and Stanley, C.R., "Efficient semiconductor ring lasers made by a simple self-aligned fabrication process", IEEE Journal on Selected Topics in Quantum Electronics, 1995, 1, pp757-761.
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7. Hansen, P.B., Raybon, G., Chien, M.-D., Koren, U., Miller, B.I., Young, M.G., Verdiell, J.-M. and Burrus, C.A., "A 1.54μm monolithic semiconductor ring laser: cw and mode-locked operation", IEEE Phot.Tech.Lett., 1992, 4, pp. 411-413, 1992.
8. Thijs, P.J.A., Binsma, J.J.M., Tiemeijer, L.F. and T.van Dongen, "Submilliamp threshold current (0.62mA at 0°C) and high output power (220mW) 1.5μm tensile strained InGaAs single quantum well lasers", Electron. Lett., 1992, 28, pp.829-830.
9. 1-y-InP tensile-strained quantum wells for 1.3-μm low threshold lasers", Phot.Technol. Lett., 1995, 7, pp.842-844.
10. Yamamoto, T., Nobuhura, H., Tanaka, K., Inoue, T., Fuji, T., Wakao, K., "Well width dependence of threshold current density in tensile strained InGaAs/InGaAsP quantum-well lasers", Japn. Joum. of Appl.Phys., 1994, 33, pp.6199-6200.
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12. Krauss, T., De La Rue, R.M. and Laybourn, P.J.R., "Impact of the output coupler configuration on the operation of semiconductor ring lasers", Journal of Lightwave Technology, 1995, 13, pp.1500-1507.
13. O'Reilly, E.P. and Adams, A.R., "Band-structure engineering in strained semiconductor-lasers", Journ. of Quant. Electron., 1994, 30, pp.366-379.
14. McLean, C, McKee, A., Lullo, G., Bryce, A.C., De La Rue, R.M. and Marsh, J.H., "Quantum-well intermixing with high spatial selectivity using a pulsed-laser technique", Electron. Lett, 1995, 31, pp.1285-1286.