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Volumn 16, Issue 4, 1998, Pages 1777-1785

Relaxation of strained, epitaxial Si1-xSnx

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0342774109     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (25)

References (27)
  • 15
    • 11644298050 scopus 로고    scopus 로고
    • note
    • x layers; this temperature was obtained from an extrapolation of pyrometer data. However, careful calibration done by J. Lundsgaard Hansen using a thermocouple mounted on a Si substrate revealed that the growth temperature is offset by 70°C, and, therefore, the growth temperature was 295°C during production of the layers used in this study.
  • 18
    • 0017191947 scopus 로고
    • edited by J. A. Venables Academic, London
    • The thickness of a plan-view sample can be determined using the distance between carbon spots produced on both surfaces of the sample by a focused e-beam when the sample is tilted a given angle; see, for example, G. W. Lorimer, G. Cliff, and J. N. Clark, in Developments in Electron Microscopy and Analysis, edited by J. A. Venables (Academic, London, 1976), p. 153.
    • (1976) Developments in Electron Microscopy and Analysis , pp. 153
    • Lorimer, G.W.1    Cliff, G.2    Clark, J.N.3
  • 19
    • 0003459874 scopus 로고
    • edited by H. Ehrenreich, F. Seitz, and D. Turnbull Academic, New York
    • G. A. Busch and R. Kern, in Solid State Physics, edited by H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New York, 1961), Vol. 11, p. 1.
    • (1961) Solid State Physics , vol.11 , pp. 1
    • Busch, G.A.1    Kern, R.2
  • 23


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.