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Volumn 34, Issue 12, 1987, Pages 2535-2539

Common Origin for Electron and Hole Traps in MOS Devices

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EID: 0342762156     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23345     Document Type: Article
Times cited : (16)

References (22)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.