Silicon nanocolloids prepared by a newly designed dc sputtering apparatus

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2077-2078

  Zhu, Y ^a   Kimura, K ^b   Zhang, L D ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342757062     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589226     Document Type: Article

References (6)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. K. A. Littau, P. J. Szajowski, A. J. Muller, A. R. Kortan, and L. E. Brus, J. Phys. Chem. 97, 1224 (1993).
3. Y. Kanemitsu, T. Futagi, T. Matsumoto, and H. Mimura, Phys. Rev. B 49, 14732 (1994).
4. S. Banerjee, K. L. Narasimhan, and A. Sardesai, Phys. Rev. B 49, 2915 (1994).
5. Y. Kanemitsu, K. Suzuki, M. Kondo, and H. Matsumoto, Solid State Commun. 89, 619 (1994).
6. S. Liu, C. Palsule, S. Yi, and S. Gangopadhyay, Phys. Rev. B 49, 10 318 (1994).