Modeling charge collection and single event upsets in microelectronics

Nuclear Inst. and Methods in Physics Research, B

Volumn 61, Issue 1, 1991, Pages 52-60

  McNulty, P J ^a   Abdel Kader, W G ^a   Lynch, J E ^a  

^a CLEMSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342719749     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(91)95560-Z     Document Type: Article

References (17)

1. Satellite Anomalies from Galactic Cosmic Rays
2. Cosmic-Ray-Induced Errors in MOS Devices
3. Upset Phenomena Induced by Energetic Protons and Electrons
4. Proc. IEEE Int. Reliability Phys. Symp.
5. Alpha-particle-induced field and enhanced collection of carriers
6. Estimating the Dimensions of the SEU-Sensitive Volume
7. Comparison of Soft Errors Induced by Heavy Ions and Protons
8. Proton-Induced Nuclear Reactions in Silicon
9. Predicting Single Event Phenomena in Space
10. The Variability of Single Event Upset Rates in the Natural Environment