Study of bimetallic effect in a GaAs cantilever beam of power sensor microsystem

ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems

Volumn 1998-October, Issue , 1998, Pages 331-334

  Lalinsky T ^a   Drzik M ^b   Hascik S ^a   Mozolova Z ^a   Kuzmik J ^a   Hatzopoulos, Z ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUTE OF CONSTRUCTION AND ARCHITECTURE   (Slovakia)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CANTILEVER BEAMS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NANOCANTILEVERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; THERMAL EXPANSION;

BEAM DEFLECTION; BIMETALLIC EFFECTS; ELECTRICAL POWER; METALLIC LEADS; OPTICAL INTERFEROMETRY; POWER SENSOR; TRANSFER CHARACTERISTICS;

MICROSYSTEMS;

EID: 0342583053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.1998.730228     Document Type: Conference Paper

References (5)

1. D. Jaeggy, H. Baltes, and D. Moser, IEEE Electron Device Letters 13, 366, 1992
2. T. Lalinský, J. Kuzmík, M. Porges, Š. Haščík, Ž. Mozolová, and L. Grňo, Electronic Letters 31, 1914, 1995
3. T. Lalinský, E. Burian, Ž. Mozolová, Š. Haščík, J. Kuzmík, P. Boháček, and Z. Hatzopo-Hatzopoulos, MICROSIMII, Simulation and Design of Microsystems and Microstructu-res, Ed. Adey R. A. and Renaud Ph., Computational Mechanics Publications, Southampton, UK, Boston, USA, 43, 1997
4. L. Gňto: IEEE Trans. Instrum. Meas. 44, 377, 1995
5. T. Lalinský, Š. Haščík, Z. Mozolová, M. Držik, and Z. Hatzopoulos, in Proceedings of the MME '98 Conference, Ulvik, Norway, 1998, p.139