New physics of the 30° partial dislocation in silicon revealed through ab initio calculation

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10029-10037

  Csányi, Gábor ^a   Engeness, Torkel D ^a   Ismail Beigi, Sohrab ^b   Arias, T A ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; FREE ENERGY; PLASTIC DEFORMATION; SILICON; SOLITONS; THERMODYNAMIC STABILITY;

EXCITATION ENERGY; PARTIAL DISLOCATION;

DISLOCATIONS (CRYSTALS);

EID: 0342538579     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/302     Document Type: Article

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