Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etching

Journal of Applied Physics

Volumn 73, Issue 12, 1993, Pages 8017-8026

  Kroesen, G M W ^a   Oehrlein, G S ^a   Frésart, E De ^a   Haverlag, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342536969     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.353916     Document Type: Article

References (23)