Investigation of performance of semi-insulating GaAs detectors irradiated by high γ doses

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 458, Issue 1-2, 2001, Pages 348-351

  Necas V ^a   Ly Anh, T ^a   Sekacova K ^b   Darmo, J ^c   Dubecky F ^c   Perd'ochova A ^a  

^a INSTITUTE OF CHEMISTRY   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; ELECTRIC INSULATING MATERIALS; GAMMA RAYS; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE;

SEMI-INSULATING MATERIALS;

RADIATION DETECTORS;

EID: 0342528059     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00881-0     Document Type: Article

References (6)

1. Harding W.R.et al. Nature. 187:1960;405.
2. Bencivelli W.et al. Nucl. Instr. and Meth. A. 335:1995;425.
3. Bertin R.et al. Nucl. Instr. Meth. A. 294:1990;211.
4. S. D,Auria (Ed.), Nucl. Instr. and Meth. A 410 (1998) 1.
5. Beaumont J.P.et al. Nucl. Instr. and Meth. A. 322:1992;472.
6. F. Dubecký et al., Gallium Arsenide and Related Compounds, P.G. Pelfer, et al. (Eds.), World Scientific, Singapore, 1996, p. 152.