Investigation on crystal growth of Bi-Sr-Cu-O system under high oxygen pressure using TSFZ method

Physica C: Superconductivity and its Applications

Volumn 341-348, Issue PART 1, 2000, Pages 541-542

  Lin, C T ^a   Liang, B ^a   Freiberg, M ^a   Peters, K ^a   Schonherr E ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Bi2+xSr2+xCuO6+ single crystal; High oxygen pressure; TSFZ growth

Indexed keywords

BISMUTH COMPOUNDS; COMPOSITION EFFECTS; CRYSTAL GROWTH; ELECTRIC PROPERTIES; PRESSURE EFFECTS; SOLUBILITY; SUPERCONDUCTIVITY;

BISMUTH STRONTIUM COPPER OXIDES; TRAVELLING SOLVENT FLOATING ZONE;

OXIDE SUPERCONDUCTORS;

EID: 0342528002     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(00)00582-7     Document Type: Article

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